Si6413DQ Description
P-Channel 1.8-V (G-S) MOSFET Si6413DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = - 4.5 V - 20 0.013 at VGS = - 2.5 V 0.016 at VGS = - 1.8 V ID (A) - 8.8 - 7.6.
Si6413DQ Key Features
- Halogen-free
- TrenchFET® Power MOSFET