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P-Channel 20-V (D-S) MOSFET
Si6447DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.09 @ VGS = –10 V –20
0.16 @ VGS = –4.5 V
ID (A)
"3.2 "2.4
S*
TSSOP-8
D1D
S2 S3
Si6447DQ
G4
Top View
8D 7S 6S 5D
G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS PD TJ, Tstg
–20 "20 "3.2 "2.5 "20 –1.7 1.5 1.
Si6447DQ Datasheet
