Si6993DQ Datasheet | Vishay

FEATURES - Halogen-free - Trench FET® Power MOSFETs Ro HS APPLICATIONS - Load Switch - Battery Switch PLIANT S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6993DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D2 7 S2 6 S2 5 G2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.0 1.14 0.73 - 55 to 150 - 4.7 - 3.8 - 30 - 0.70 0.83 0.53 W °C 10 s Steady State - 30 ± 20 - 3.6 - 3.2 A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol Rth JA Rth JF Typical 86 124 52 Maximum 110 150 65 °C/W Unit Document Number: 72369 S-81221-Rev. B, 02-Jun-08 .vishay. 1 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.0 A, d I/dt = 100 A/µs VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω f = 1.0 MHz VDS = - 15 V, VGS = - 4.5 V, ID...