SiEH4800EW Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - Wettable flanks enhances solderability - Fully lead (Pb)-free device - Very low RDS x Qg figure of merit (FOM) - 50 % smaller footprint than D2PAK (TO-263) - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Synchronous rectification - OR-ing - Motor drive control - Battery management N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAK® 8 x 8 BWL Si EH4800EW-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 175 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA =70 °C Operating junction and storage temperature range Soldering remendations (peak temperature) c VDS VGS IDM IS IAS...