SiEH4800EW Description
SiEH4800EW Vishay Siliconix N-Channel 80 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8 BWL Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ.
SiEH4800EW Key Features
- TrenchFET® Gen IV power MOSFET
- Wettable flanks enhances solderability
- Fully lead (Pb)-free device
- Very low RDS x Qg figure of merit (FOM)
- 50 % smaller footprint than D2PAK (TO-263)
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance