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SiR800ADP - N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiR800ADP
Manufacturer Vishay
File Size 174.97 KB
Description N-Channel MOSFET
Datasheet download datasheet SiR800ADP Datasheet
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Full PDF Text Transcription

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www.vishay.com SiR800ADP Vishay Siliconix N-Channel 20 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 20 0.00135 0.00175 0.00460 18.2 177 g Single FEATURES • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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