SiR802DP Description
New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.005 at VGS = 10 V 0.0057 at VGS = 4.5 V 0.0076 at VGS = 2.5 V ID (A)a 30 30 30 15.5 nC Qg.
SiR802DP Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Gen III Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to RoHS Directive 2002/95/EC