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SiR802DP - N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Gen III Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8.

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Datasheet Details

Part number SiR802DP
Manufacturer Vishay
File Size 188.41 KB
Description N-Channel MOSFET
Datasheet download datasheet SiR802DP Datasheet
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Full PDF Text Transcription

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New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.005 at VGS = 10 V 0.0057 at VGS = 4.5 V 0.0076 at VGS = 2.5 V ID (A)a 30 30 30 15.5 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm • DC/DC • Low Voltage Drive • POL D G Bottom View Ordering Information: SiR802DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
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