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SiR808DP - N-Channel 25 V (D-S) MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile.
  • Optimized for High-Side Synchronous Rectifier Operation.
  • 100 % Rg Tested.
  • 100 % UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC D.

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Datasheet Details

Part number SiR808DP
Manufacturer Vishay
File Size 307.72 KB
Description N-Channel 25 V (D-S) MOSFET
Datasheet download datasheet SiR808DP Datasheet
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Full PDF Text Transcription

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N-Channel 25 V (D-S) MOSFET SiR808DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 25 RDS(on) () 0.0089 at VGS = 10 V 0.0119 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 7.5 nC PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR808DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Low 1.
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