SiS606BDN Description
() at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 2S 3S 4S G Bottom View 100 0.0174 0.0205 15.1 35.3 a, g Single.
SiS606BDN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS
- Qg figure-of-merit (FOM)
- Tuned for the lowest RDS
- Qoss FOM
- 100 % Rg and UIS tested