SiS698DN Description
() at VGS = 10 V RDS(on) max. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 100 0.195 0.230 5.2 6.9 Single.
SiS698DN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Low Qg for high efficiency
- Material categorization: