SiS612EDNT Description
() at VGS = 4.5 V RDS(on) max. () at VGS = 3.7 V RDS(on) max. () at VGS = 2.5 V Qg typ.
SiS612EDNT Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Low thermal resistance PowerPAK package
- Typical ESD performance 3400 V
- Material categorization: for definitions of pliance