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SiS612EDNT - N-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested.
  • Low thermal resistance PowerPAK package with small size and 0.75 mm profile.
  • Typical ESD performance 3400 V.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SiS612EDNT Vishay Siliconix N-Channel 20 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 3.7 V RDS(on) max. () at VGS = 2.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 20 0.0039 0.0042 0.0058 22.5 50 f, g Single FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Low thermal resistance PowerPAK package with small size and 0.75 mm profile • Typical ESD performance 3400 V • Material categorization: for definitions of compliance please see www.vishay.