SiSS32ADN Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 4 3 S 2 S S G Bottom View 80 0.0073 0.0087 18.5 63 Single.
SiSS32ADN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS
- Qg figure-of-merit (FOM)
- Tuned for the lowest RDS
- Qoss FOM
- 100 % Rg and UIS tested