Datasheet4U Logo Datasheet4U.com

SiSS32DN - N-Channel 80V MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS - Qg figure-of-merit (FOM).
  • Tuned for the lowest RDS - Qoss FOM.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – SiSS32DN

Datasheet Details

Part number SiSS32DN
Manufacturer Vishay
File Size 226.71 KB
Description N-Channel 80V MOSFET
Datasheet download datasheet SiSS32DN Datasheet
Additional preview pages of the SiSS32DN datasheet.

📁 Similar Datasheet

  • SISS27DN-T1-GE3 - 30V P-Channel MOSFET (Kexin)
  • SIS0100 - Black and White Image Sensor Camera Module (Sanyo Semicon Device)
  • SiS1057 - JFET Operational Amplifier (Silicon Supplies)
  • SIS23C128 - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
  • SIS23C128A - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
  • SIS23C256 - CMOS MASK ROM (ETC)
  • SIS23C256A - CMOS MASK ROM (ETC)
  • SIS23C32 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
  • SIS23C32A - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
  • SIS23C33 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com SiSS32DN Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 4 3 S 2 S S G Bottom View 80 0.0072 0.0087 31.5 63 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
Published: |