SiSS5112DN
SiSS5112DN is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Synchronous rectification
- Primary side switch
- DC/DC converters
- Power supplies
- Motor drive control
G N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8S Si SS5112DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs) Continuous source-drain diode current
TC = 25 °C TA = 25 °C
Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
L = 0.1 m H
TC = 25 °C
TC = 70 °C TA = 25...
