SiSS5112DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 100 0.0149 0.0185 8 40.7 Single.
SiSS5112DN Key Features
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100 % Rg and UIS tested