SiSS52DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.0012 0.0019 19.9 162 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free, halogen-free, BLR and IOL.
SiSS52DN Key Features
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Enables higher power density with very low
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance