SiSS52DN Datasheet | Vishay

FEATURES - Trench FET® Gen V power MOSFET - Very low RDS x Qg figure-of-merit (FOM) - Enables higher power density with very low RDS(on) and thermally enhanced pact package - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - DC/DC converterä - POL - Synchronous rectification - Battery management - Power and load switch N-Channel MOSFET Power PAK 1212-8S Si SS52DN-T1-GE3 Si SS52DN-T1-UE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering remendations (peak temperature) c VDS VGS IDM IS IAS EAS TJ, Tstg LIMIT 30 +16 / -12 162...