SiSS5623DN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -60 0.024 0.046 10.1 -36.2 Single.
SiSS5623DN Key Features
- New generation p-channel power MOSFET
- 100 % Rg and UIS tested
- Ultra low RDS x Qg FOM product