SiSS54DN Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.00106 0.0015 21 185.6 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free.
SiSS54DN Key Features
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Enables higher power density with very low
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance