SiSS54DN
SiSS54DN is N-Channel 30V MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Enables higher power density with very low
RDS(on) and thermally enhanced pact package
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- DC/DC converter
- POL
- Synchronous rectification
- Battery management
- Power and load switch
N-Channel MOSFET
Power PAK 1212-8S SISS54DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
Single pulse avalanche current Single pulse avalanche energy
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25...
