SiSS5710DN Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 150 0.0315 0.037 7.7 26.2 Single.
SiSS5710DN Key Features
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure of merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100 % Rg and UIS tested