Datasheet4U Logo Datasheet4U.com

V60200PGW Datasheet Dual High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: .DataSheet.co.kr New Product V60200PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Datasheet Details

Part number V60200PGW
Manufacturer Vishay
File Size 141.15 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V60200PGW_Vishay.pdf

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition TO-3PW PIN 1 PIN 3 PIN 2 CASE TMBS®.

More Datasheets from Vishay

Part Number Description
V60200PG Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V60100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60170G-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60D100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60D100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V60200PGW Distributor