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V60200PGW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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V60200PGW Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V60200PGW

Datasheet Details

Part number	V60200PGW
Manufacturer	Vishay
File Size	141.15 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60200PGW Datasheet
Additional preview pages of the V60200PGW datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition TO-3PW PIN 1 PIN 3 PIN 2 CASE TMBS®.

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Published: Feb 2, 2012 |