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VB30100CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number VB30100CHM3
Manufacturer Vishay
File Size 85.96 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30100CHM3 Datasheet

Overview

www.vishay.com VB30100C-M3, VB30100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB30100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM 2 x 15 A 100 V IFSM 160 A VF at IF = 15 A TJ max.

Diode variations 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • AEC-Q101 qualified available: - Automotive ordering code P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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