VSSB310 Datasheet | Vishay

.Data Sheet.co.kr New Product Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier Features - Low profile package TMBS ® - Ideal for automated placement - Trench MOS Schottky technology - Low power losses, high efficiency - Low forward voltage drop - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - pliant to Ro HS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DO-214AA (SMB) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 3.0 A TJ max. 3.0 A 100 V 80 A 50 m J 0.56 V 150 °C For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Molding pound meets UL 94 V-0 flammability rating Base P/N-E3 - Ro HS pliant, mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 m H Peak repetitive reverse current at tp = 2 µs, 1 k Hz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range Notes (1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 P.C.B. (2) Free air, mounted on remended copper pad area VRRM IF IF (1) (2) SYMBOL VSSB310 V3B 100 3.0 UNIT 1.9 80 50 1.0 - 40 to + 150 A m J A °C IFSM EAS IRRM TJ,...