VSSB420S Datasheet | Vishay

.Data Sheet.co.kr New Product Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier Features TMBS® - Low profile package - Ideal for automated placement - Trench MOS Schottky technology - Low power losses, high efficiency - Low forward voltage drop - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AA (SMB) - pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 4.0 A TJ max. 4.0 A 200 V 40 A 0.71 V 150 °C For use in high frequency converters, freewheeling diodes, DC/DC converters and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and Ro HS pliant, mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range Notes (1) Units mounted on PCB with 20 mm x 20 mm pad areas (2) Free air, mounted on remended PCB 1 oz. pad area VRRM IF IF (1) (2) SYMBOL VSSB420S V4D 200 4.0 UNIT 1.8 40 10 000 - 40 to + 150 A V/μs °C IFSM d V/dt TJ,...