VSSB3L6S
VSSB3L6S is Surface Mount Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.Data Sheet.co.kr
New Product
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
Features
TMBS
®
- Low profile package
- Ideal for automated placement
- Trench MOS Schottky technology
- Low power losses, high efficiency
- Low forward voltage drop
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Not remended for PCB bottom side wave mounting
DO-214AA (SMB)
- pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
3.0 A 60 V 80 A 0.42 V 150 °C
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 3.0 A TJ max.
MECHANICAL DATA
Case: DO-214AA (SMB) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range Notes (1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on remended copper pad area VRRM IF (1) IF (2) IFSM d V/dt TJ, TSTG SYMBOL VSSB3L6S 3L6 60 3.0 A 2.6 80 10 000
- 55 to + 150 A V/μs °C V UNIT
Document Number: 89347 Revision: 18-Oct-10
For technical questions within your region, please contact one of the following: Diodes Americas@vishay., Diodes Asia@vishay., Diodes...
