VSSB420S-M3 Description
VSSB420S-M3 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® DO-214AA (SMB) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 4.0 A TJ max. Package 4.0 A 200 V 40 A 0.71 V 150 °C DO-214AA (SMB) Diode variation Single die.
VSSB420S-M3 Key Features
- Low profile package
- Ideal for automated placement
- Trench MOS Schottky technology
- Low power losses, high efficiency
- Low forward voltage drop
- Material categorization: For definitions of pliance
VSSB420S-M3 Applications
- halogen-free and RoHS-pliant, mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisk