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VSSB420S-M3 - Surface Mount Trench MOS Barrier Schottky Rectifier

Key Features

  • Low profile package.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low power losses, high efficiency.
  • Low forward voltage drop.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VSSB420S-M3
Manufacturer Vishay
File Size 84.31 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VSSB420S-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VSSB420S-M3 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® DO-214AA (SMB) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 4.0 A TJ max. Package 4.0 A 200 V 40 A 0.71 V 150 °C DO-214AA (SMB) Diode variation Single die FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, freewheeling diodes, DC/DC converters and polarity protection applications.