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PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC PD Tj Tstg
2SB624
3
2 1
SC-59
Limits -30 -25 -5 -700 200 150
-55 to +150
Unit V V V A mW ˚C ˚C
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 Emitter-Base Breakdown Voltage IE=-100µA, IC=0
Collector Cutoff Current VCB=-30V, IE=0
Emitter Cutoff Current VEB=-5V, IE=0
Symbol
Min Typ Max Unit
BVCBO
-30
-
-V
BVCEO
-25
-
-V
BVEBO -5 -
-V
ICBO - - -0.1 µA
IEBO - - -0.
2SB624 Datasheet
