BAV756DW Datasheet | WEJ

RoHS BAV756DW BAV756DW SWITCHING DIODE DFeatures TPower dissipation .,LPD : 200 mW (Tamb=25℃) Collector current IF: 150 mA OCollector-base voltage VR: 75 V COperating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ ICMARKING:KCA SOT-363 RONELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) TParameter CReverse breakdown voltage EReverse voltage leakage current ELForward voltage JJunction capacitance WEReveres recovery time Symbol Test conditions V(BR) R IR VF Cj trr IR= 2.5µA VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V f=1MHz IF=IR=10mA Irr=0.1ХIR RL=100Ω MIN MAX 2.5 0.025 715 855 1000 1250 UNIT V µA mV pF nS WEJ ELECTRONIC CO....