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WFF9N50 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplie

Key Features

  • 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFF9N50
Manufacturer WINSEMI SEMICONDUCTOR
File Size 957.12 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF9N50 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.in WFF9N50 Silicon N-Channel MOSFET Features � � � � � 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.