Datasheet4U Logo Datasheet4U.com

WFF9N50 - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplie

Features

  • 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet preview – WFF9N50

Datasheet Details

Part number WFF9N50
Manufacturer WINSEMI SEMICONDUCTOR
File Size 957.12 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF9N50 Datasheet
Additional preview pages of the WFF9N50 datasheet.

📁 Similar Datasheet

  • WFF9N90 - Silicon N-Channel MOSFET (Winsemi)
  • WFF - Fast Fusible Metal Film Resistors (Welwyn Components Limited)
  • WFF10N60 - N-Channel MOSFET (Wisdom technologies)
  • WFF10N65L - Silicon N-Channel MOSFET (Winsemi)
  • WFF1101 - (WFF1xx1) GB Directions for Use (BOSCH)
  • WFF1121 - (WFF1xx1) GB Directions for Use (BOSCH)
  • WFF1201 - (WFF1xx1) GB Directions for Use (BOSCH)
  • WFF12N60 - N-Channel MOSFET (Wisdom technologies)
  • WFF12N65L - Silicon N-Channel MOSFET (Winsemi)
  • WFF12N65LCA - Silicon N-Channel MOSFET (Winsemi)
Other Datasheets by WINSEMI SEMICONDUCTOR

Full PDF Text Transcription

Click to expand full text
www.DataSheet.in WFF9N50 Silicon N-Channel MOSFET Features � � � � � 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Published: |