NXPLQSC30650W
NXPLQSC30650W is Silicon Carbide Diode manufactured by WeEn.
description
Dual Silicon Carbide Schottky diode in a 3-lead TO247 plastic package, designed for high frequency switched-mode power supplies. h Ro HS alogen-Free
Lead-Free
2. Features and benefits
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- Ro HS pliant
3. Applications
- Power factor correction
- Tele / Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED / OLED TV
- Motor Drives
4. Quick reference data
Table 1. Quick reference data Symbol Parameter Absolute maximum rating
Conditions
VRRM repetitive peak reverse voltage
IO(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 43 °C; both diodes conducting; Fig. 1; Fig. 2; Fig. 3
Tj junction temperature
Symbol Parameter
Conditions
Static characteristics
VF forward voltage
Dynamic characteristics
IF = 15 A; Tj = 25 °C; per diode; Fig. 5 IF = 15 A; Tj = 150 °C; per diode; Fig. 5
Qr recovered charge
IF = 15 A; d IF/dt = 500 A/μs; VR = 400 V;
Tj = 25 °C; per diode; Fig. 7
Values
Unit
175 Min Typ
°C Max...
