WeEn Semiconductors NXPLQSC30650W
Silicon Carbide Diode
| Part No. | NXPLQSC30650W |
|---|---|
| Datasheet | NXPLQSC30650W Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Highly stable switching performance● High forward surge capability IFSM
● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant 3.
APPLICATIONS
● Power factor correction● Telecom / Server SMPS
● UPS
● PV inverter
● PC Silverbox
● LED / OLED TV
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IO(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 43 °C; both diodes conducting; Fig. 1; Fig. 2; Fig. 3 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage Dynamic characteristics IF = 15 A; Tj = 25 °C; per diode; Fig. 5 IF = 15 A; Tj = 150 °C; per diode; Fig. 5 Qr recovered charge IF = 15 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; per diode; Fig. 7 Values Unit 650 V 30 A 175 Min Typ °C Max Unit - 1.75 1.95 V - 2.4 2.8 V - 16 - nC WeEn Semiconductors 5.
