TYN40-800T Datasheet | WeEn

description Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits - High junction operating temperature capability (Tj(max) = 150 °C) - Very high current surge capability - Planar passivated for voltage ruggedness and reliability - High turn-on current rise d IT/dt = 100 A/µs - High noise immunity d VD/dt = 500 V/µs up to 150 °C - High thermal cycling performance - High voltage capability 3. Applications - Ignition circuits - Protection circuits e.g. SMPS inrush current - Motor control circuits and starters - Voltage regulation - Solid state relays - High junction operating temperature capability (Tj(max) = 150 °C) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature Conditions half sine wave; Tmb ≤ 128°C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Values 800 40 450 495 150 Unit V A A A °C We En Semiconductors Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics d VD/dt rate of rise of off-state voltage Conditions...