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TYN40Y-800T Datasheet PDF

WeEn Semiconductors TYN40Y-800T

SCR

Part No. TYN40Y-800T
Datasheet TYN40Y-800T Download
Manufacturer
WeEn Semiconductors
Description SCR
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TYN40Y-800T datasheet page 1 preview

FEATURES AND BENEFITS

● High junction operating temperature capability (Tj(max) = 150 °C)
● High bidirectional blocking voltage capability
● Very high current surge capability
● High thermal cycling performance
● Planar passivated for voltage ruggedness and reliability
● Internally insulated package
● Isolated mounting base with 2500 V (RMS) isolation 3.

APPLICATIONS

● High voltage capability
● Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment
● Capacitive Discharge Ignition (CDI)
● Crowbar protection
● Inrush protection
● Motor control
● Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current half sine wave; Tmb ≤ 97 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; state current Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Symbol Parameter Conditions Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig.
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