TYN40Y-800T Datasheet | WeEn

description Planar passivated Silicon Controlled Rectifier (SCR) in IITO220 internally insulated plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits - High junction operating temperature capability (Tj(max) = 150 °C) - High bidirectional blocking voltage capability - Very high current surge capability - High thermal cycling performance - Planar passivated for voltage ruggedness and reliability - Internally insulated package - Isolated mounting base with 2500 V (RMS) isolation 3. Applications - High voltage capability - Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment - Capacitive Discharge Ignition (CDI) - Crowbar protection - Inrush protection - Motor control - Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current half sine wave; Tmb ≤ 97 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; state current Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Symbol Parameter Conditions Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 IH holding current VT on-state voltage Dynamic characteristics VD = 12 V; Tj = 25 °C; Fig. 9 IT = 80 A; Tj = 25 °C; Fig. 10 d VD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit Notes Values...