WeEn Semiconductors TYN40Y-800T
SCR
FEATURES AND BENEFITS
● High junction operating temperature capability (Tj(max) = 150 °C)● High bidirectional blocking voltage capability
● Very high current surge capability
● High thermal cycling performance
● Planar passivated for voltage ruggedness and reliability
● Internally insulated package
● Isolated mounting base with 2500 V (RMS) isolation 3.
APPLICATIONS
● High voltage capability● Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment
● Capacitive Discharge Ignition (CDI)
● Crowbar protection
● Inrush protection
● Motor control
● Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current half sine wave; Tmb ≤ 97 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; state current Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Symbol Parameter Conditions Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig.