TYN40B-800T Datasheet | WeEn

description Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits - High junction operating temperature capability (Tj(max) = 150 °C) - Very high current surge capability - Planar passivated for voltage ruggedness and reliability - High turn-on current rise d IT/dt = 150 A/µs - High noise immunity d VD/dt = 500 V/µs up to 150 °C - High thermal cycling performance - High voltage capability 3. Applications - High voltage capability - Protection circuits e.g. SMPS inrush current - Motor control circuits and starters - Voltage regulation - Solid state relays 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Notes Values VDRM repetitive peak off-state 800 voltage IT(RMS) RMS on-state current half sine wave; Tmb ≤ 136 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; 450 state current Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature -40 to 150 Symbol Parameter Conditions Notes Min Typ Max Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 -...