TYN40-800TN Datasheet | WeEn

description Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C) 2. Features and benefits - High junction operating temperature capability (Tj(max) = 150 °C) - Very high current surge capability - Planar passivated for voltage ruggedness and reliability - High turn-on current rise d IT/dt = 200 A/µs - High noise immunity d VD/dt = 1000 V/µs up to 150 °C - High thermal cycling performance - High voltage capability 3. Applications - Ignition circuits - Protection circuits e.g. SMPS inrush current - Motor control circuits and starters - Voltage regulation - Solid state relays - High junction operating temperature capability (Tj(max) = 150 °C) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM IT(RMS) ITSM repetitive peak off-state voltage RMS on-state current non-repetitive peak onstate current half sine wave; Tmb ≤ 129 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Symbol Parameter Conditions Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 80 A; Tj = 25 °C; Fig. 10 d VD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit Notes Values 800 495 -40 to 150 Notes Min Typ Max -...