Datasheet4U Logo Datasheet4U.com

WG50N65DHJ - IGBT

Description

High speed IGBT with anti-parallel diode in TO3PF package.

High speed with low switching losses Fast and soft recovery anti-parallel diode Positive VCE(sat)

3.

Power Factor Correction

📥 Download Datasheet

Datasheet preview – WG50N65DHJ

Datasheet Details

Part number WG50N65DHJ
Manufacturer WeEn
File Size 1.09 MB
Description IGBT
Datasheet download datasheet WG50N65DHJ Datasheet
Additional preview pages of the WG50N65DHJ datasheet.

📁 Similar Datasheet

Other Datasheets by WeEn

Full PDF Text Transcription

Click to expand full text
WG50N65DHJ IGBT Rev.01 - 23 July 2021 1. General description High speed IGBT with anti-parallel diode in TO3PF package. • High speed with low switching losses • Fast and soft recovery anti-parallel diode • Positive VCE(sat) • • • Low thermal resistance 3. Applications • Power Factor Correction • Welding Converter • Industrial Inverter 4. Quick reference data Table 1. Quick reference data Symbol VCE IC Symbol Parameter TC Parameter j j(max) Conditions Static characteristics VCE(sat) Collector-emitter saturation VGE C j voltage Value Unit V A Min Typ Max Unit - V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate C collector 3 E emitter mb C collector WG50N65DHJ IGBT Graphic symbol 6.
Published: |