WG50N65HDJ2 - IGBT

Description

WG50N65HDJ2 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO3PF package to provide extremely low VCE(sat), and excellent switching performance.

This device offers Best-inClass efficiency in hard switching and resonant topology.

Features

Maximum junction temperature 175 °C.
Positive temperature efficient for easy paralleling.
Very soft, fast recovery anti-parallel diode.
High speed switching.
EMI Improved Design 3.

WeEn

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Datasheet Details

Part number	WG50N65HDJ2
Manufacturer	WeEn
File Size	960.65 KB
Description	IGBT
Datasheet	WG50N65HDJ2 Datasheet
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WG50N65HDJ2 IGBT Rev.01 - 22 October 2024 Product data sheet 1. General description WG50N65HDJ2 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO3PF package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-inClass efficiency in hard switching and resonant topology. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive temperature efficient for easy paralleling • Very soft, fast recovery anti-parallel diode • High speed switching • EMI Improved Design 3. Applications • PFC • Solar converters • UPS • Welding Converters • Mid to high range switching frequency converters 4. Quick reference data Table 1.

Published: Feb 11, 2025 |