WG50N65HDJ2 Description
WG50N65HDJ2 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO3PF package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-inClass efficiency in hard switching and resonant topology.
WG50N65HDJ2 Key Features
- Maximum junction temperature 175 °C
- Positive temperature efficient for easy paralleling
- Very soft, fast recovery anti-parallel diode
- High speed switching
- EMI Improved Design