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WG50N65HDJ2 - IGBT

General Description

WG50N65HDJ2 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO3PF package to provide extremely low VCE(sat), and excellent switching performance.

This device offers Best-inClass efficiency in hard switching and resonant topology.

2.

Key Features

  • Maximum junction temperature 175 °C.
  • Positive temperature efficient for easy paralleling.
  • Very soft, fast recovery anti-parallel diode.
  • High speed switching.
  • EMI Improved Design 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WG50N65HDJ2 IGBT Rev.01 - 22 October 2024 Product data sheet 1. General description WG50N65HDJ2 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO3PF package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-inClass efficiency in hard switching and resonant topology. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive temperature efficient for easy paralleling • Very soft, fast recovery anti-parallel diode • High speed switching • EMI Improved Design 3. Applications • PFC • Solar converters • UPS • Welding Converters • Mid to high range switching frequency converters 4. Quick reference data Table 1.