WG50N65HAW1 - IGBT

Description

WG50N65HAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low Vce(sat), and excellent switching performance.

This device offers Best-in-Class efficiency in hard switching and resonant topology.

Features

Maximum junction temperature 175 °C.
Positive temperature efficient for easy paralleling.
Very soft, fast recovery anti-parallel diode.
High speed switching.
EMI Improved Design 3.

WeEn

📥 Download Datasheet

Datasheet Details

Part number	WG50N65HAW1
Manufacturer	WeEn
File Size	961.30 KB
Description	IGBT
Datasheet	WG50N65HAW1 Datasheet
Additional preview pages of the WG50N65HAW1 datasheet.

📁 Similar Datasheet

Other Datasheets by WeEn

Full PDF Text Transcription

Click to expand full text

WG50N65HAW1 IGBT Rev.02 - 22 November 2024 Product data sheet 1. General description WG50N65HAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive temperature efficient for easy paralleling • Very soft, fast recovery anti-parallel diode • High speed switching • EMI Improved Design 3. Applications • PFC • Solar converters • UPS • Welding Converters • Mid to high range switching frequency converters 4. Quick reference data Table 1.

Published: Mar 7, 2025 |