WG50N65DHJ1 - IGBT

Description

WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance.

This device is ideal for low switching frequency power conversion applications.

Features

Positive Temperature efficient for Easy Parallel Operating.
High Current Capability.
Low saturation Voltage VCE(Sat) = 1.25 V(Typ. ) @ IC = 50 A.
EMI Improved Design 3.

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Datasheet Details

Part number	WG50N65DHJ1
Manufacturer	WeEn
File Size	934.03 KB
Description	IGBT
Datasheet	WG50N65DHJ1 Datasheet
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WG50N65DHJ1 IGBT Rev.01 - 28 February 2024 Product data sheet 1. General description WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications. RoHS halogen-Free 2. Features and benefits • Positive Temperature efficient for Easy Parallel Operating • High Current Capability • Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A • EMI Improved Design 3. Applications • Solar Inverter • UPS • PFC • Converters 4. Quick reference data Table 1.

Published: Feb 11, 2025 |