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WG50N65DHJ1 - IGBT

General Description

WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance.

This device is ideal for low switching frequency power conversion applications.

2.

Key Features

  • Positive Temperature efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low saturation Voltage VCE(Sat) = 1.25 V(Typ. ) @ IC = 50 A.
  • EMI Improved Design 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WG50N65DHJ1 IGBT Rev.01 - 28 February 2024 Product data sheet 1. General description WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications. RoHS halogen-Free 2. Features and benefits • Positive Temperature efficient for Easy Parallel Operating • High Current Capability • Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A • EMI Improved Design 3. Applications • Solar Inverter • UPS • PFC • Converters 4. Quick reference data Table 1.