WG50N65DHJ1 Description
WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications.
WG50N65DHJ1 Key Features
- Positive Temperature efficient for Easy Parallel Operating
- High Current Capability
- Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
- EMI Improved Design
WG50N65DHJ1 Applications
- Positive Temperature efficient for Easy Parallel Operating