Datasheet Summary
IGBT
Rev.01
- 28 February 2024
Product data sheet
1. General description
WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications.
RoHS halogen-Free
2. Features and benefits
- Positive Temperature efficient for Easy Parallel Operating
- High Current Capability
- Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
- EMI Improved Design
3. Applications
- Solar Inverter
- UPS
- PFC
- Converters
4. Quick reference data
Table 1. Quick reference data
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