WSJM65R099D Description
WSJM65R099D is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.
WSJM65R099D Key Features
- Superior FOM RDS(on)
- Extremely low switching loss
- Integrated ultrafast body diode
- 100% avalanche tested