WeEn Semiconductors WSJM65R099DX
WSJM65R099DX is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.| Part No. | WSJM65R099DX |
|---|---|
| Datasheet | WSJM65R099DX Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Super-Junction Power MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Superior FOM RDS(on) * Qg● Extremely low switching loss
● Integrated ultrafast body diode
● 100% avalanche tested 3.
APPLICATIONS
● LLC applications● LEV charger
● Server power
● LED power 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS drain-source voltage VGS gate-source voltage ID continuous drain current Ptot power dissipation Tj junction temperature Symbol Parameter Static characteristics RDS(on) drain-source on-state resistance Dynamic characteristics Conditions Th = 25 °C Th = 25 °C Conditions VGS = 10 V, ID = 16 A QG(tot) EOSS total gate charge coss stored erergy ID = 16 A; VDS = 400 V; VGS = 10 V VGS = 0 V; VDS = 0 to 400 V Notes Values Unit 650 ±30 [1] 32 36 -55 to 150 Notes Min Typ Max V V A W °C Unit - 85 99 mΩ - 57 - nC - 7.0 - μJ WeEn Semiconductors WSJM65R099DX Super-Junction Power MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 G gate 2 D drain 3 S source mb n.c. mounting base; isolated Simplified outline mb Graphic symbol D G sym302 S 1 23 6.
