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WSJM65R099DB - Super-Junction Power MOSFET

Description

WSJM65R099DB is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)

Qg among silicon based MOSFETs.

It is particularly suitable for applications require extreme high efficiency and power density.

Features

  • Superior FOM RDS(on).
  • Qg.
  • Extremely low switching loss.
  • Integrated ultrafast body diode.
  • 100% avalanche tested 3.

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Datasheet Details

Part number WSJM65R099DB
Manufacturer WeEn
File Size 613.74 KB
Description Super-Junction Power MOSFET
Datasheet download datasheet WSJM65R099DB Datasheet

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WSJM65R099DB Super-Junction Power MOSFET Rev.02 - 24 July 2024 Product data sheet 1. General description WSJM65R099DB is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density. RoHS halogen-Free 2. Features and benefits • Superior FOM RDS(on) * Qg • Extremely low switching loss • Integrated ultrafast body diode • 100% avalanche tested 3. Applications • LLC applications • LEV charger • Server power • LED power 4. Quick reference data Table 1.
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