MMBTA94
MMBTA94 is High-Voltage PNP Transistor Surface Mount manufactured by Weitron Technology.
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High-Voltage PNP Transistor Surface Mount
COLLECTOR 3
SOT-23
3 1 2
1 BASE 2 EMITTER
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -400 -450 -6.0 -300 Unit Vdc Vdc Vdc m Adc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R JA PD R JA TJ,Tstg Max 225 1.8 556 350 2.8 357 -55 to +150 Unit m W m W/ C C/W m W m W/ C C/W C
Device Marking
MMB T A94=4D
Electrical Characteristics Off Characteristics
(T A =25 C Unles s Otherwis e noted) Symbol Min Max Unit
Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=-1.0m Adc. IB=0) Collector-Base Breakdown Voltage (IC=-100 u Adc, IE=0) Emitter-Base Breakdown Voltage (IE=-10 u Adc, IC=0) Collect Cutoff Current (VCB= -400Vdc, IE=0) Emitte Cutoff Current (VEB=-4V, IC=0) 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO
-400 -450 -6.0
100 100
Vdc Vdc Vdc n Adc n Adc
- WEITRON http://.weitron..tw
1/4
23-Sep-05
Electrical Characteristics (TA=25˚C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics
DC Current Gain (IC= -1.0 m Adc, VCE=-10Vdc) (IC= -10 m Adc, VCE= -10Vdc) (IC= -50 m Adc, VCE= -10Vdc) (IC= -100 m Adc, VCE= -10Vdc) Collector-Emitter Saturation Voltage (IC= -1.0 m Adc, IB= -0.1 m Adc) (IC= -10 m Adc, IB= -1.0 m Adc) (IC= -50 m Adc, IB= -5.0 m Adc) Base-Emitter Saturation Voltage (IC= -10 m Adc, IB= -1.0 m Adc) (3) VCE(sat) (3)
- HFE(1) HFE(2) HFE(3) HFE(4)
40 50 45 20
2.00...
