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WTC2307 - Enhancement Mode Power MOSFET

Features

  • SOURCE 2.
  • Super High Dense Cell Design For Low R DS(ON) R DS(ON).

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Datasheet Details

Part number WTC2307
Manufacturer Weitron Technology
File Size 764.75 KB
Description Enhancement Mode Power MOSFET
Datasheet download datasheet WTC2307 Datasheet

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Full PDF Text Transcription

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WTC2307 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.0 AMPERS DRAIN SOUCE VOLTAGE -16 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS=-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 (TA=25˚C) (TA=70˚C) Pulsed Drain Current 1 Unless Otherwise Specified) Symbol VDS VGS ID I DM Value -16 ±8 -4.0 -3.3 -12 1.
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