Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.0 AMPERS DRAIN SOUCE VOLTAGE -16 VOLTAGE
..
Features
:
SOURCE
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS=-4.5V
- Rugged and Reliable
- Simple Drive Requirement
- SOT-23 Package
3 1 2
SOT-23
Applications
- Power Management in Notebook puter
- Portable Equipment
- Battery Powered System
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 (TA=25˚C) (TA=70˚C) Pulsed Drain Current
Unless Otherwise Specified) Symbol
VDS VGS ID I DM
Value
-16 ±8 -4.0 -3.3 -12 1.38 90 -55~+150
Unit
Total Power Dissipation
(TA=25˚C...