The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MSD601
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Total Device Dissipation TA=25°C Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC IC(P) PD Tj Tstg
Value
50 60 7.0 100 200 0.2 +150 -55 to +150
Unit
V V V mA mA mW °C °C
WEITRON
http://www.weitron.com.tw
1/6
18-Sep-06
MSD601
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Emitter Breakdown Voltage IC = 2.