Datasheet Summary
Single P-Channel, -20V, -4.0A, Power MOSFET
VDS (V) -20
Typical RDS(on) (mΩ)
43 @ VGS=-4.5V 55 @ VGS=-2.5V
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Descriptions
The WPM2080 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2080 is Pb-free.
Features
SOT-23-3L
D 3
12 GS
Pin configuration (Top view)
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package SOT-23-3L
Applications
- DC/DC converters
- Power supply...