Datasheet Summary
Single P-Channel, -20V, -3.2A, Power MOSFET
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VDS (V) -20
Typical RDS(on) (mΩ)
43 @ VGS=-4.5V 55 @ VGS=-2.5V
Descriptions
The WPM2081 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2081 is Pb-free.
Features
S G SOT-23
D 3
12 GS
Pin configuration (Top view)
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package SOT-23
Applications
- DC/DC converters
- Power...