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WPM2081 - MOSFET

Description

The WPM2081 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • D S G SOT-23 D 3 12 GS Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23.

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Datasheet Details

Part number WPM2081
Manufacturer WillSEMI
File Size 680.92 KB
Description MOSFET
Datasheet download datasheet WPM2081 Datasheet

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Full PDF Text Transcription

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WPM2081 Single P-Channel, -20V, -3.2A, Power MOSFET WPM2081 Http://www.sh-willsemi.com VDS (V) -20 Typical RDS(on) (mΩ) 43 @ VGS=-4.5V 55 @ VGS=-2.5V Descriptions The WPM2081 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2081 is Pb-free.
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