PFP110N10S Datasheet | Wing On

FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 6.5 mΩ (Typ.) @VGS=10V APPLICATION  DC Motor control for E-bike & Power tools  Amplifier and car booster  Load Switch  DC-DC converters PFP110N10S/PFB110N10S 100V N-Channel MOSFET BVDSS = 100 V RDS(on) = 6.5 mΩ ID = 117 A Drain  Gate  - ◀▲ - -  Source TO-220 1 2 3 1.Gate 2. Drain 3. Source D2-PAK 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Tj=25℃ unless otherwise specified Symbol VDSS VGSS IDM EAS RθJC TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25℃) Continuous Drain Current (TC = 100℃) Pulsed Drain Current Single Pulsed Avalanche Energy Maximum Power Dissipation (TC = 25℃) Maximum Power Dissipation (TC = 70℃) Thermal Resistance, Junction-to-Case...