PFP4N65F Datasheet | Wing On

FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 12.4 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.2 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFP4N65F / PFF4N65F 650V N-Channel MOSFET BVDSS = 650 V RDS(on) = 2.2 Ω ID = 4.0 A TO-220 Drain  Gate  - ◀▲ - -  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25o C unless otherwise specified Symbol Parameter PFF4N65F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note...