Datasheet4U Logo Datasheet4U.com

PFP4N65F - N-Channel MOSFET

Datasheet Summary

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 12.4 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.2 Ω (Typ. ) @VGS=10V.

📥 Download Datasheet

Datasheet preview – PFP4N65F

Datasheet Details

Part number PFP4N65F
Manufacturer Wing On
File Size 833.32 KB
Description N-Channel MOSFET
Datasheet download datasheet PFP4N65F Datasheet
Additional preview pages of the PFP4N65F datasheet.

📁 Similar Datasheet

  • PFP4N60 - N-channel MOSFET (PowerGate)
  • PFP - DIN Rail Mounting Track (Omron Electronics)
  • PFP13N50 - 500V N-Channel MOSFET (Power Device)
  • PFP18N50 - 500V N-Channel MOSFET (Power Device)
  • PFP3205 - N-channel Power MOSFET (PowerGate)
  • PFP7N60 - N-channel MOSFET (PowerGate)
Other Datasheets by Wing On

Full PDF Text Transcription

Click to expand full text
PFP4N65F / PFF4N65F FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 12.4 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.2 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFP4N65F / PFF4N65F 650V N-Channel MOSFET BVDSS = 650 V RDS(on) = 2.2 Ω ID = 4.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
Published: |