PFP4N80 - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 3.8 Ω (Typ. ) @VGS=10V.

PFP4N80 n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFP4N80
Manufacturer	Wing On
File Size	1.28 MB
Description	N-Channel MOSFET
Datasheet	PFP4N80 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PFP4N60	N-channel MOSFET	PowerGate
PFP	DIN Rail Mounting Track	Omron Electronics
PFP13N50	500V N-Channel MOSFET	Power Device
PFP18N50	500V N-Channel MOSFET	Power Device
PFP3205	N-channel Power MOSFET	PowerGate

Other Datasheets by Wing On

Part Number	Description
PFP4N60E	N-Channel MOSFET
PFP4N65F	N-Channel MOSFET
PFP4N70E	N-Channel MOSFET
PFP100N10S	N-Channel Super Junction MOSFET
PFP10N40	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

May 2009 PFP4N80 / PFF4N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3.8 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors PFP4N80/PFF4N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 4.8 Ω ID = 3.5 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.