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WBP13003D Datasheet NPN Power Transistor

Manufacturer: Winsemi

Overview: WBP13003D High Voltage Fast-Switching NPN Power Transistor.

Datasheet Details

Part number WBP13003D
Manufacturer Winsemi
File Size 399.17 KB
Description NPN Power Transistor
Datasheet WBP13003D-Winsemi.pdf

General Description

This Device is designed for high Voltage ,High speed switching Characteristics required such as lighting system,switching mode power supply.

Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector pulse Current IB Base Current IBM Base peak Current Total Dissipation at Tc*=25℃ PC Total Dissipation at Ta*=25℃ TJ Operation Junction Temperature TSTG Storage Temperature Test conditions VBE=0 IB=0 IC=0 tP=5ms Value 700 400 9.0 1.5 3.0 0.75 1.5 40 1.2 -40~150 -40~150 Units V V V A A A A W ℃ ℃ Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink) Thermal characteristics Symbol Parameter

Key Features

  • Very High Switching Speed.
  • High Voltage Capability.
  • Wide Reverse Bias SOA.
  • Built-in free wheeling diode symbol 2.Collector 1.Base 3.Em itter General.

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