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WBP13009-K Datasheet NPN Power Transistor

Manufacturer: Winsemi

Overview: WBP13009-K High Voltage Fast- Switching NPN Power Transistor.

Datasheet Details

Part number WBP13009-K
Manufacturer Winsemi
File Size 333.72 KB
Description NPN Power Transistor
Datasheet WBP13009-K-Winsemi.pdf

General Description

This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply.

Absolute Maximum Ratings Symbol Parameter VCES Collector -Emitter Voltage VCEO Collector -Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector pulse Current IB Base Current IBM Base Peak Current Total Dissipation at Tc*=25℃ PC Total Dissipation at Ta*=25℃ TJ Operation Junction Temperature TSTG Storage Temperature Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink) Thermal Characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Case RӨJA Thermal Resistance Junction to Ambient Test Conditions VBE=0 IB=0 IC=0 tP=5ms Value 700 400 9.0 12 25 6.0 12 100 2.2 -40~150 -40~150 Units V V V

Key Features

  • Very High Switching Speed.
  • High Voltage Capability.
  • Wide Reverse Bias SOA General.

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