WFF5N60B - Silicon N-Channel MOSFET

Winsemi

General Description

Silicon N-Channel MOSFET

Key Features

4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V.
Ultra-low Gate charge(Typical 15nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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WFF5N60B silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFF5N60B
Manufacturer	Winsemi
File Size	205.94 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFF5N60B Datasheet

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WFF5N60B Product Description Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.