WFF5N65L - Silicon N-Channel MOSFET

Winsemi

General Description

Silicon N-Channel MOSFET

Key Features

4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V.
Ultra-low Gate charge(Typical 14.5nC).
Fast Switching Capability.
100%Avalanche Tested.
Enhanced EMI capability.
Maximum Junction Temperature Range(150℃) General.

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WFF5N65L silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFF5N65L
Manufacturer	Winsemi
File Size	239.05 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFF5N65L Datasheet

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WFF5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this product have lower resistance,Superior switching performance and high EAS capability. The product can be widely used in AC-DC switching power supply, DC-DC power converter, and high H bridge PWM motor drive.